Field Effect Density of States in a-(Si,Ge):H Films
We report field-effect measurements of the density-of-states (DOS) distribution in the last-deposited surface of undoped glow-discharge a-(Si,Ge):H alloy films containing up to 15% Ge. Over the energy range investigated (EfEEf+0.4 eV) the DOS exhibits a peak approximately 0.7 eV below Ec, and the to...
|Journal Title:||Journal of Applied Physics Vol. 60; no. 2; pp. 692 - 695|
|Authors:||E.A. Fagen, Pritpal Singh|