Field Effect Density of States in a-(Si,Ge):H Films

We report field-effect measurements of the density-of-states (DOS) distribution in the last-deposited surface of undoped glow-discharge a-(Si,Ge):H alloy films containing up to 15% Ge. Over the energy range investigated (EfEEf+0.4 eV) the DOS exhibits a peak approximately 0.7 eV below Ec, and the to...

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Journal Title: Journal of Applied Physics Vol. 60; no. 2; pp. 692 - 695
Authors: E.A. Fagen, Pritpal Singh
Format: Article
Published: 07/15/1986
Online Access: Full Text