GaN Based High Electron Mobility Transistors for Microwave and RF Control Applications

Heterojunction FETs or high electron-mobility transistors (HEMTs) based on Al x Ga 1-x N/GaN are studied for their use as control components for high-power microwave and RF control devices (switches, phase-shifters, etc.). A linear operation model was developed for these components so that optimum t...

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Journal Title: IEEE Transactions on Microwave Theory and Techniques Vol. 50; no. 2; pp. 4 - 8
Authors: Robert H. Caverly, N. Drozdovski
Format: Article
Language: English
Published: January 2002
Online Access: Full Text