GaN Based High Electron Mobility Transistors for Microwave and RF Control Applications
Heterojunction FETs or high electron-mobility transistors (HEMTs) based on Al x Ga 1-x N/GaN are studied for their use as control components for high-power microwave and RF control devices (switches, phase-shifters, etc.). A linear operation model was developed for these components so that optimum t...
|Journal Title:||IEEE Transactions on Microwave Theory and Techniques Vol. 50; no. 2; pp. 4 - 8|
|Authors:||Robert H. Caverly, N. Drozdovski|